Observation of reduced boron penetration and gate depletion for poly-Si/sub 0.8/Ge/sub 0.2/ gated PMOS devices
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (1) , 9-11
- https://doi.org/10.1109/55.737557
Abstract
Poly-Si/sub 0.8/Ge/sub 0.2/-and poly-Si-gated PMOS capacitors with very thin gate oxides were fabricated. Boron penetration and poly-gate depletion effects (PDE) in these devices were both analyzed. Observations of smaller flat-band voltage shift and superior gate oxide reliability suggest less boron penetration problem in poly-Si/sub 0.8/Ge/sub 0.2/-gated devices. Higher dopant activation rate, higher active dopant concentration near the poly/SiO/sub 2/ interface and therefore improved PDE were also found in boron-implanted poly-Si/sub 0.8/Ge/sub 0.2/-gated devices as compared to poly-Si-gated devices. A larger process window therefore exists for a poly-Si/sub 0.8/Ge/sub 0.2/ gate technology with regard to the tradeoff between boron penetration and poly-gate depletion.Keywords
This publication has 7 references indexed in Scilit:
- AC Charge Centroid Model For Quantization Of Inversion Layer In N-MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Flat-band voltage shifts in p-MOS devices caused by carrier activation in p/sup +/-polycrystalline silicon and boron penetrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Diffusion and Electrical Properties of Boron and Arsenic Doped Poly‐Si and Poly‐ Ge x Si1 − x (x ∼ 0.3) as Gate Material for Sub‐0.25 μm Complementary Metal Oxide Semiconductor ApplicationsJournal of the Electrochemical Society, 1997
- Characterization of polysilicon-gate depletion in MOS structuresIEEE Electron Device Letters, 1996
- Low Pressure Chemical Vapor Deposition of Si1 − x Ge x Films on SiO2 : Characterization and ModelingJournal of the Electrochemical Society, 1995
- Deposition and Properties of Low‐Pressure Chemical‐Vapor Deposited Polycrystalline Silicon‐Germanium FilmsJournal of the Electrochemical Society, 1994
- Effect of polysilicon depletion on MOSFET I–V characteristicsElectronics Letters, 1993