AC Charge Centroid Model For Quantization Of Inversion Layer In N-MOSFET

This publication has 7 references indexed in Scilit:

• Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages
  Solid-State Electronics, 1996
• Quantization effects in inversion layers of PMOSFETs on Si (100) substrates
  IEEE Electron Device Letters, 1996
• Self-consistent calculation of electron and hole inversion charges at silicon–silicon dioxide interfaces
  Journal of Applied Physics, 1986
• Quantum properties of surface space-charge layers
  C R C Critical Reviews in Solid State Sciences, 1973
• Self-Consistent Results forn-Type Si Inversion Layers
  Physical Review B, 1972