Annealing-temperature influence on the dispersive diffusion of hydrogen in undopeda-Si:H
- 15 October 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (11) , 7277-7279
- https://doi.org/10.1103/physrevb.42.7277
Abstract
We have measured by the method of elastic-recoil detection analysis the variation of the dispersion parameter α of hydrogen diffusion in undoped a-Si:H as a function of the annealing temperature between 350 and 470 °C. We found that α increases with . We suggest a mechanism which can explain this new result, as well as the variation of α with the film-deposition temperature reported earlier.
Keywords
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