Influence of the surface Si/buried oxide interface on extended defect evolution in silicon-on-insulator scaled to 300 Å
- 1 November 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 20 (6) , 2243-2247
- https://doi.org/10.1116/1.1517410
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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