Effect of buried Si-SiO2 interfaces on oxidation and implant-enhanced dopant diffusion in thin silicon-on-insulator films

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Abstract
The diffusion behavior of phosphorus and boron was used to study point defect kinetics in silicon‐on‐insulator (SOI) material. Phosphorus marker layers were used to study oxidation enhanced diffusion in bulk and bonded and etched‐back silicon‐on‐insulator (BESOI) material under oxidizing conditions at 750, 800, and 850 °C. An effective interstitial recombination velocity Kox for the buried Si‐SiO2 interface in the BESOI material was extracted by fitting the experimentally obtained phosphorus profiles with s u p r e m−i v simulation results. The data can be modeled with a time‐independent interface recombination velocity. The same parameter set incorporating this extracted recombination velocity was used to accurately model the implant enhanced diffusion of boron marker layers at 750 and 800 °C in thin SOI films, implying the recombination velocity is independent of the interstitial supersaturation. The expression Kox/DI=4.7×10−3 exp(+1.34/kT) fits this work and also a wide range of literature results at higher temperatures.