A pile-up phenomenon during arsenic diffusion in silicon-on-insulator structures formed by oxygen implantation
- 15 October 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (8) , 3585-3589
- https://doi.org/10.1063/1.344063
Abstract
Arsenic diffusion in silicon-on-insulator formed by deep oxygen implantation is studied by secondary ion mass spectroscopy and speading resistance measurements. An enhanced diffusivity as well as a pile-up phenomenon are observed in the thin silicon layer. The McNabb and Foster equations [Trans. TMS-AIME 22, 618 (1963)] for diffusion with trapping are solved in order to simulate this last effect.This publication has 18 references indexed in Scilit:
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