Thin-Film Encapsulants for Thermal Processing of GaAs
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
During heat treatment of GaAs there is a tendency for arsenic to evaporate. This process can have deleterious consequences and must be controlled during the annealing of GaAs by using encapsulants. In this work we use a Cr collector to catch the evaporated atoms. This collector is placed on top of GaAs or GaAs/cap during annealing. We survey the effectiveness of W, Hf and HfN as capping materials for thermal annealings of 10 min. for 450–700 C and compare them to Si3N4. The backscattering spectrometry results show that Si3N4 and W were excellent caps up to 700 C for 10 min. No evaporation was defected through HfN either, but hillock formation was detected on the surface. Hf failed because of its chemical reaction with GaAs at 650 C, 10 min.Keywords
This publication has 9 references indexed in Scilit:
- A novel cap-annealing technique using a WN/sub x/ film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication processIEEE Transactions on Electron Devices, 1988
- Reactively sputtered WSiN film suppresses As and Ga outdiffusionJournal of Vacuum Science & Technology B, 1988
- Stability of metal/GaAs-lnterfaces: A phase diagram surveyJournal of Electronic Materials, 1988
- Effect of heating on the structure of Au/GaAs encapsulated with SiO2Solid-State Electronics, 1987
- Solid‐Phase Ohmic Contact to p ‐ GaAs with W and W‐N Diffusion BarriersJournal of the Electrochemical Society, 1987
- Direct measurement of evaporation during rapid thermal processing of capped GaAsApplied Physics Letters, 1987
- Evaporated aluminium nitride encapsulating filmsThin Solid Films, 1986
- Initial decomposition of GaAs during rapid thermal annealingApplied Physics Letters, 1986
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982