Theory of bound states induced by disorder and isoelectronic potentials: Ga(As,P):N
- 15 January 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (2) , 802-811
- https://doi.org/10.1103/physrevb.15.802
Abstract
A theory is presented in which bound states arising from a combination of long-range and short-range isoelectronic potentials are shown to account for recent experimental data in Ga(As,P):N. These results alter our physical picture in this system. Numerical calculations agree with experiment. They indicate that the long-range potential may correspond to a deformation potential which arises from a uniform, slowly varying dilation of the lattice constant in the region of the nitrogen atom. Analysis of experimental data suggests an expansion of 0.9% of the lattice constant.Keywords
This publication has 22 references indexed in Scilit:
- Radiative recombination efficiencies in Ga(As,P) : N and (In,Ga)P : NJournal of Applied Physics, 1976
- Theory of the optical properties of resonant states in nitrogen-doped semiconductor alloysPhysical Review B, 1975
- Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1−xPx: N(EN = EΓ, x ≡ xN)Solid State Communications, 1975
- Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow-green (λ≲5560 Å, ℏ ω≳2.23 eV)Journal of Applied Physics, 1972
- Radiative recombination mechanisms in GaAsP diodes with and without nitrogen dopingJournal of Applied Physics, 1972
- Spontaneous and stimulated photoluminescence on nitrogen A-line and NN-pair line transitions in GaAs1−x Px : NJournal of Applied Physics, 1972
- Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap inPhysical Review B, 1972
- Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps inPhysical Review Letters, 1971
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966