Room-temperature conductivity and location of mobile sodium ions in the thermal silicon dioxide layer of a metal–silicon dioxide–silicon structure
- 1 December 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (12) , 5149-5151
- https://doi.org/10.1063/1.323594
Abstract
Room‐temperature conductivity of mobile Na+ ions in the SiO2 layer of a metal–silicon dioxide–silicon structure is directly shown to be interface limited by use of the photo I‐V technique. Na+ ions were found to be located within ?50 Å of the interfaces regardless of field stressing conditions (2–4.5 MV/cm), temperature (20–40 °C), number of ions drifted (up to 2.6×1012 cm−2), or number of temperature‐bias cycles used to move Na+ ions back and forth between the interfaces.This publication has 11 references indexed in Scilit:
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