Effects on interface barrier energies of metal-aluminum oxide-semiconductor (MAS) structures as a function of metal electrode material, charge trapping, and annealing
- 1 December 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (12) , 5454-5456
- https://doi.org/10.1063/1.1663258
Abstract
Energy barrier heights at the interfaces of metal‐aluminum oxide‐silicon structures have been measured via internal photoemission as a function of metal electrodematerial, premetallization annealingtreatment, and charge trapping. Barrier heights at the Si–Al2O3interface were insensitive to gate metal, annealingtreatment, and charge trapping. Zero‐field energy barriers for the Au,Ni, Al, or Mg and Al2O3interfaces were found to be 4.1±0.1, 3.7±0.1, 3.2±0.1, and 2.5±0.1 eV, respectively. Effects of charge trapping on the barrier height were measurable only for the Mg–Al2O3interface.Annealingtreatments had no effects on barrier heights within the accuracy of the measurement technique.This publication has 9 references indexed in Scilit:
- Trap structure of pyrolytic Al2O3 in MOS capacitorsApplied Physics Letters, 1973
- Effects of Postdeposition Annealing Treatments on Charge Trapping in CVD Al[sub 2]O[sub 3] Films on SiJournal of the Electrochemical Society, 1973
- Electronic charge trapping in chemical vapor-deposited thin films of Al2O3 on siliconJournal of Applied Physics, 1972
- Internal Photoemission Measurements in a Metal-Al2O3–Si SystemJournal of Applied Physics, 1971
- Photoinjection Studies of Charge Distributions in Oxides of MOS StructuresJournal of Applied Physics, 1971
- Charge Injection in MAOS SystemsJournal of the Electrochemical Society, 1971
- Interface Barrier Energy Determination from Voltage Dependence of Photoinjected CurrentsJournal of Applied Physics, 1970
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931