Surface processes in laser-atomic layer epitaxy (laser-ALE) of GaAs
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 190-194
- https://doi.org/10.1016/0022-0248(88)90526-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 7 references indexed in Scilit:
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- Erratum: Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs [Appl. Phys. Lett. 4 7, 95 (1985)]Applied Physics Letters, 1986
- Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAsApplied Physics Letters, 1985
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985