Stoichiometry of III–V compounds
- 1 September 1994
- journal article
- review article
- Published by Elsevier in Materials Science and Engineering: R: Reports
- Vol. 12 (6-8) , 273-426
- https://doi.org/10.1016/0927-796x(94)90003-5
Abstract
No abstract availableKeywords
This publication has 73 references indexed in Scilit:
- ZnSe epitaxial growth by the temperature difference method under controlled vapor pressure (TDM-CVP) using Se solventJournal of Crystal Growth, 1991
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski MethodJournal of the Electrochemical Society, 1984
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressureJournal of Crystal Growth, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAsApplied Physics Letters, 1970
- Effect of Heat Treatments on GaAs LuminescencePhysica Status Solidi (b), 1968
- Precision lattice constant determinationActa Crystallographica, 1960