Tuning correlation and localization lengths with high magnetic fields near the metal-insulator transition
- 1 December 1987
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 56 (6) , 805-820
- https://doi.org/10.1080/13642818708215315
Abstract
Various experiments at low-temperatures on Si:As in the critical regime (0·8 < N/N c< 1·2) near the metal-insulator transition have yielded information on magnetic-field-induced changes in the correlation and localization lengths. The measurements include magnetoresistance of metallic samples, magnetocapacitance, a.c. magnetoconductance, and the field dependence of Mott variable-range-hopping conduction for insulating samples. The field-induced changes in ζ(N, H) are interpreted in terms of field-induced changes in the critical density Nc and the correlation-localization-length exponent v(H). The implications of the results for the Shapiro phase diagram are discussed.Keywords
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