Optical activation of Be implanted into GaN
- 16 September 1998
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (12) , 1622-1624
- https://doi.org/10.1063/1.122225
Abstract
Single crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of optically active Be acceptors and has been assigned to band–acceptor (eA) recombinations. The determined ionization energy of 150±10 meV confirmed that isolated Be has the most shallow acceptor level in GaN. Co-implantation of nitrogen did not enhance the activation of the Be acceptors.Keywords
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