SEGR response of a radiation-hardened power MOSFET technology
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 2944-2951
- https://doi.org/10.1109/23.556890
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Power MOSFETs hardened for single event effects (SEE) in spacePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETsIEEE Transactions on Nuclear Science, 1996
- Experimental studies of single-event gate rupture and burnout in vertical power MOSFETsIEEE Transactions on Nuclear Science, 1996
- Measurement of a cross-section for single-event gate rupture in power MOSFETsIEEE Electron Device Letters, 1996
- LET Spectra in Low Earth OrbitIEEE Transactions on Nuclear Science, 1986