Measurement of a cross-section for single-event gate rupture in power MOSFETs
- 1 April 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (4) , 163-165
- https://doi.org/10.1109/55.485161
Abstract
The heavy-ion fluence required to induce Single-Event Gate Rupture (SEGR) in power MOSFETs is measured as a function of the drain bias, V/sub DS/, and as a function of the gate bias, V/sub GS/. These experiments reveal the abrupt nature of the SEGR-voltage threshold. In addition, the concepts of cross-section, threshold, and saturation in the SEGR phenomenon are introduced. This experimental technique provides a convenient method to quantify heavy-ion effects in power MOSFETs.Keywords
This publication has 11 references indexed in Scilit:
- Destructive single-event effects in semiconductor devices and ICsIEEE Transactions on Nuclear Science, 2003
- Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expressionIEEE Transactions on Nuclear Science, 1995
- Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependenceIEEE Transactions on Nuclear Science, 1995
- Evaluation of SEGR threshold in power MOSFETsIEEE Transactions on Nuclear Science, 1994
- Evidence of the ion's impact position effect on SEB in N-channel power MOSFETsIEEE Transactions on Nuclear Science, 1994
- Single-event gate rupture in vertical power MOSFETs; an original empirical expressionIEEE Transactions on Nuclear Science, 1994
- A conceptual model of a single-event gate-rupture in power MOSFETsIEEE Transactions on Nuclear Science, 1993
- Rate prediction for single event effects-a critiqueIEEE Transactions on Nuclear Science, 1992
- Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)IEEE Transactions on Nuclear Science, 1992
- Development of cosmic ray hardened power MOSFET'sIEEE Transactions on Nuclear Science, 1989