Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 42 (6) , 1928-1934
- https://doi.org/10.1109/23.489236
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Observations of single event failure in power MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Single event gate rupture of power DMOS transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Single event gate rupture in commercial power MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Evaluation of SEGR threshold in power MOSFETsIEEE Transactions on Nuclear Science, 1994
- Temperature and angular dependence of substrate response in SEGR [power MOSFET]IEEE Transactions on Nuclear Science, 1994
- A conceptual model of a single-event gate-rupture in power MOSFETsIEEE Transactions on Nuclear Science, 1993
- Structural and electrical damage induced by high-energy heavy ions in SiO2/Si structuresJournal of Applied Physics, 1992
- Ion-induced electrical breakdown in metal-insulator-silicon capacitorsJournal of Applied Physics, 1990
- Ion-induced electrical breakdown in metal-oxide-silicon capacitorsJournal of Applied Physics, 1990
- On Heavy Ion Induced Hard-Errors in Dielectric StructuresIEEE Transactions on Nuclear Science, 1987