Power MOSFETs hardened for single event effects (SEE) in space
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Measurements are presented for the single event effects and total dose responses of the newly introduced Harris "FS" series of space hardened power MOSFETs. The hardness appears to offer a breakthrough for commercial space requirements.Keywords
This publication has 27 references indexed in Scilit:
- Analysis of the time-dependent turn-on mechanism for single-event burnout of n-channel power MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Evaluation of SEGR threshold in power MOSFETsIEEE Transactions on Nuclear Science, 1994
- Burnout sensitivity of power MOSFETs operating in a switching converterIEEE Transactions on Nuclear Science, 1994
- Simulating single-event burnout of n-channel power MOSFET'sIEEE Transactions on Electron Devices, 1993
- Charge generation by heavy ions in power MOSFETs, burnout space predictions and dynamic SEB sensitivityIEEE Transactions on Nuclear Science, 1992
- Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)IEEE Transactions on Nuclear Science, 1992
- Mechanism for single-event burnout of power MOSFETs and its characterization techniqueIEEE Transactions on Nuclear Science, 1992
- Solutions to heavy ion induced avalanche burnout in power devicesIEEE Transactions on Nuclear Science, 1992
- Comparison of experimental measurements of power MOSFET SEBs in dynamic and static modesIEEE Transactions on Nuclear Science, 1991
- Features of the triggering mechanism for single event burnout of power MOSFETsIEEE Transactions on Nuclear Science, 1989