Burnout sensitivity of power MOSFETs operating in a switching converter
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (3) , 583-588
- https://doi.org/10.1109/23.299803
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)IEEE Transactions on Nuclear Science, 1992
- Comparison of experimental measurements of power MOSFET SEBs in dynamic and static modesIEEE Transactions on Nuclear Science, 1991
- SEU Sensitivity of Power Converters with MOSFETs in SpaceIEEE Transactions on Nuclear Science, 1987
- First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross SectionsIEEE Transactions on Nuclear Science, 1987
- Burnout of Power MOS Transistors with Heavy Ions of Californium-252IEEE Transactions on Nuclear Science, 1986