Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
- 1 April 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (2) , 533-545
- https://doi.org/10.1109/23.490899
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
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