GaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites
- 20 December 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 22 (1) , 31-36
- https://doi.org/10.1016/0921-5107(93)90219-d
Abstract
No abstract availableThis publication has 34 references indexed in Scilit:
- Photoemission spectroscopy of GaAs:As photodiodesApplied Physics Letters, 1992
- Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayersApplied Physics Letters, 1991
- Subpicosecond photoresponse of carriers in low-temperature molecular beam epitaxial In0.52Al0.48As/InPApplied Physics Letters, 1990
- Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperaturesApplied Physics Letters, 1990
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Anomalies in MODFET's with a low-temperature bufferIEEE Transactions on Electron Devices, 1990
- Picosecond GaAs-based photoconductive optoelectronic detectorsApplied Physics Letters, 1989
- Effect of a GaAs buffer layer grown at low substrate temperatures on a high-electron-mobility modulation-doped two-dimensional electron gasApplied Physics Letters, 1989
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988