Investigations of donor and acceptor removal and long term annealing in silicon with different boron/phosphorus ratios
- 1 August 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 377 (2-3) , 228-233
- https://doi.org/10.1016/0168-9002(96)00217-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Long term reverse annealing in silicon detectorsIEEE Transactions on Nuclear Science, 1994
- Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experimentsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Electron paramagnetic resonance of multistable interstitial-carbon–substitutional-group-V-atom pairs in siliconPhysical Review B, 1993
- Fast neutron-induced changes in net impurity concentration of high-resistivity siliconIEEE Transactions on Nuclear Science, 1992
- Formation of ultrashallow p+ layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealingApplied Physics Letters, 1991
- AC hopping conductivity and DLTS studies on electron-irradiated boron-doped siliconSemiconductor Science and Technology, 1987
- Annealing of Electron-Irradiated-Type Silicon. I. Donor Concentration DependencePhysical Review B, 1971
- Electrical Behavior of Group III and V Implanted Dopants in SiliconJournal of Applied Physics, 1969