Formation of ultrashallow p+ layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealing
- 22 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (16) , 1748-1750
- https://doi.org/10.1063/1.105104
Abstract
Boron atoms are incorporated into (100)Si wafers by heating the substrates at 800 °C for 30 min in a (B2H6+H2) atmosphere and by subsequent rapid thermal annealing above 900 °C. Atomic and carrier‐concentration profiles of boron‐doped layers have been examined by a secondary‐ion mass spectrometry and by differential Hall measurements, respectively. Experimental results have clearly shown that ultrashallow p+ layers, 300 Å thick, with a surface carrier concentration of 7.26×1019/cm3 can be formed by diffusion of boron at 800 °C and by subsequent RTA at 100 °C.Keywords
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