Characterization of AlGaAs/GaAs interfaces by EELS and high‐resolution Z‐contrast imaging in scanning transmission electron microscopy (STEM)
- 1 June 1992
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 19 (1-12) , 374-378
- https://doi.org/10.1002/sia.740190170
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Thermal vibrations in convergent-beam electron diffractionActa Crystallographica Section A Foundations of Crystallography, 1991
- Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)Journal of Crystal Growth, 1991
- Spatially resolved EELS of GaAs/GaAlAs heterostructuresMicroscopy Microanalysis Microstructures, 1991
- High-resolution imaging of silicon (111) using a 100 keV STEMUltramicroscopy, 1990
- High-resolution incoherent imaging of crystalsPhysical Review Letters, 1990
- Unbiased method for signal estimation in electron energy loss spectroscopy, concentration measurements and detection limits in quantitative microanalysis: Methods and programsUltramicroscopy, 1988
- Delocalization corrections for electron channeling analysisUltramicroscopy, 1988
- Parallel detection electron spectrometer using quadrupole lensesUltramicroscopy, 1987
- Elemental mapping with elastically scattered electronsJournal of Microscopy, 1986
- Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructuresSurface Science, 1983