High-resolution imaging of silicon (111) using a 100 keV STEM
Open Access
- 28 February 1990
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 32 (2) , 93-102
- https://doi.org/10.1016/0304-3991(90)90027-j
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Annular dark field electron microscope images with better than 2 Å resolution at 100 kVApplied Physics Letters, 1989
- Z-contrast stem for materials scienceUltramicroscopy, 1989
- Visibility of single heavy atoms on thin crystalline silicon in simulated annular dark-field STEM imagesActa Crystallographica Section A Foundations of Crystallography, 1988
- Simulation of annular dark field stem images using a modified multislice methodUltramicroscopy, 1987
- Calibration of the operating parameters for an HB5 stem instrumentUltramicroscopy, 1986
- Electronic and chemical analysis of fluoride interface structures at subnanometer spatial resolutionJournal of Vacuum Science & Technology B, 1986
- Lattice and atomic structure imaging of semiconductors by high resolution transmission electron microscopyApplied Physics Letters, 1985
- Coherent and incoherent imaging in the scanning transmission electron microscopeJournal of Physics D: Applied Physics, 1974
- Scanning Transmission Electron Microscopy at High ResolutionProceedings of the National Academy of Sciences, 1974
- The Theoretical Resolution Limit of the Electron MicroscopeJournal of Applied Physics, 1949