The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour
- 1 October 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (10) , 1749-1762
- https://doi.org/10.1088/0268-1242/9/10/001
Abstract
No abstract availableKeywords
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