Growth and characterization of strained superlattices δ-GaNxAs1−x/GaAs by molecular beam epitaxy
- 1 February 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (4) , 648-652
- https://doi.org/10.1016/s0022-0248(99)00625-9
Abstract
No abstract availableKeywords
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