High frequency CV characteristics of plasma oxidisedsilicon carbide
- 2 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (1) , 97-98
- https://doi.org/10.1049/el:19970055
Abstract
Oxides have successlally been grown on 4H-silicon carbide substrates by low temperature (Dit of 2 × 1011eV-1cm-2, a Qf of 1.05 × 1012cm-2 and show negligible slow trapping effects.Keywords
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