1/f noise in GaAs filaments
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (11) , 2548-2553
- https://doi.org/10.1109/16.97421
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- 1/f noise in quarter-micron filaments of GaAs and InP made by focused ion-beam implantationSolid-State Electronics, 1991
- Device process dependence of low-frequency noise in GaAlAs/GaAs heterostructureSolid-State Electronics, 1989
- 1/f noise in ion-implanted indium phosphide layersSolid-State Electronics, 1988
- Low-frequency noise in GaAs layers grown by molecular beam epitaxySolid-State Electronics, 1988
- An anomalous behavior in low-frequency GaAs resistor noiseSolid-State Electronics, 1985
- Low-frequency noise in Gallium Arsenide MESFETsSolid-State Electronics, 1984
- Low-frequency noise characteristics of Gallium Arsenide MESFETsSolid-State Electronics, 1984
- Low-frequency noise in GaAs current limitersSolid-State Electronics, 1983
- 1f noise in GaAs MESFETSSolid-State Electronics, 1981
- 1/ƒ noise is no surface effectPhysics Letters A, 1969