Etats électroniques occupés et inoccupés de SiO2 mesurés par photoémission directe et inverse et par émission d'X mous

1 January 1987

journal article
Published by EDP Sciences in Journal de Physique

Vol. 48 (1) , 81-91
https://doi.org/10.1051/jphys:0198700480108100

Abstract

Journal de Physique, Journal de Physique Archives représente une mine d informations facile à consulter sur la manière dont la physique a été publiée depuis 1872.

Keywords

This publication has 12 references indexed in Scilit:

Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103
Published by Elsevier ,2004
Si(111) surface oxidation: O 1s core-level study using synchrotron radiation
Surface Science, 1986
Theory of amorphous Si $O_{2}$ and $Si O_{x}$ . I. Atomic structural models
Physical Review B, 1982
Microscopic Calculation of Localized Electron States in an Intrinsic Glass
Physical Review Letters, 1981
Electronic structure and Coulomb correlation energy in UO2 single crystal
Solid State Communications, 1980
A study of the charging and dissociation of SiO2 Surfaces by AES
Surface Science, 1977
Electronic structures of silicon, aluminum, and magnesium in tetrahedral coordination with oxygen from SCF-X.alpha. MO calculations
Journal of the American Chemical Society, 1975
Photoemission Measurements of the Valence Levels of Amorphous Si $O_{2}$
Physical Review Letters, 1971
The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements
Solid State Communications, 1971
Röntgenspektroskopische Untersuchung der Struktur des Valenzbandes von Silicium, Siliciumcarbid und Siliciumdioxid
The European Physical Journal A, 1967