Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis
- 1 June 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (3) , 1599-1604
- https://doi.org/10.1109/23.507154
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A phenomenological model for the macroscopic characteristics of irradiated siliconIl Nuovo Cimento A (1971-1996), 1996
- Hall effect analysis on neutron irradiated high resistivity siliconNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Radiation studies and operational projections for silicon in the ATLAS inner detectorNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Radiation damage in silicon detectorsLa Rivista del Nuovo Cimento, 1994
- Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- On the prediction of radiation levels in LHC experimentsNuclear Physics B - Proceedings Supplements, 1993
- Thermally stimulated current spectroscopy: Experimental techniques for the investigation of silicon detectorsReview of Scientific Instruments, 1993
- Results on radiation hardness of silicon detectors up to neutron fluences of 1015 n/cm2Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
- Type inversion in silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992