The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 655-660
- https://doi.org/10.1016/0168-583x(91)96252-g
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- 3D simulations of ion implantation processesApplied Surface Science, 1989
- The role of point defects in anomalous diffusion of implanted boron in siliconJournal of Applied Physics, 1989
- Implantation damage and anomalous diffusion of implanted boron in siliconApplied Physics Letters, 1989
- A spatial damage energy distribution calculation for ion-implanted materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Some aspects of damage annealing in ion-implanted silicon: Discussion in terms of dopant anomalous diffusionJournal of Applied Physics, 1987
- A direct and fast computing method for damage energy depth distribution in ion implanted materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Rapid annealing and the anomalous diffusion of ion implanted boron into siliconApplied Physics Letters, 1987
- Three-dimensional distributions of ion range and damage including recoil transportNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Modeling Rapid Thermal Diffusion of Arsenic and Boron in SiliconJournal of the Electrochemical Society, 1984
- The Displacement of Atoms in Solids by RadiationReports on Progress in Physics, 1955