Ellipsometric characterization of oxidized porous silicon layer structures
- 1 January 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 69-70, 182-187
- https://doi.org/10.1016/s0921-5107(99)00257-3
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Investigation of different oxidation processes for porous silicon studied by spectroscopic ellipsometryPublished by Elsevier ,1999
- Comparative study of the oxidation of thin porous silicon layers studied by reflectometry, spectroscopic ellipsometry and secondary ion mass spectroscopyJournal of Luminescence, 1998
- Depth inhomogeneity of porous silicon layersJournal of Applied Physics, 1996
- Anodic oxidation of p- and p+-type porous silicon: surface structural transformations and oxide formationThin Solid Films, 1996
- Characterization of different porous silicon structures by spectroscopic ellipsometryThin Solid Films, 1996
- Luminescent anodized silicon aerocrystal networks prepared by supercritical dryingNature, 1994
- Rapid Thermal Oxidation for Passivation of Porous SiliconMRS Proceedings, 1994
- Characterisation of porous silicon layers by spectroscopic ellipsometryJournal of Luminescence, 1993
- Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5–5 eV rangeSolid State Communications, 1992
- Atmospheric impregnation of porous silicon at room temperatureJournal of Applied Physics, 1991