Rapid Thermal Oxidation for Passivation of Porous Silicon
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Fitting of rocking curves from ion-implanted semiconductorsJournal of Applied Crystallography, 1994
- The role of hydrogen in luminescence of electrochemically oxidized porous Si layerJournal of Luminescence, 1993
- Stability of visible luminescence from porous siliconApplied Physics Letters, 1993
- Effect of thermal annealing and surface coverage on porous silicon photoluminescenceApplied Physics Letters, 1992
- Comparing Effects of Vacuum Annealing and Dry Oxidationon the Photoluminescence of Porous SiJapanese Journal of Applied Physics, 1992
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- Studies of coherent and diffuse x-ray scattering by porous siliconJournal of Applied Physics, 1992
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- The tension of metallic films deposited by electrolysisProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1909