Precipitation of Oxygen and Intrinsic Gettering in Silicon
- 1 January 1980
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
In this review, dislocations introduced by prismatic punching at SiO2precipitate sites in Czochralski silicon are shown to act as metal adsorption centers. Conditions necessary to localize SiO2precipitate and dislocation complexes in wafer regions remote from semiconductor devices are discussed. This localization achieves an intrinsic gettering effect. The application of the intrinsic gettering mechanism to bipolar and MOS device technologies is shown to improve device performance and leakage limited yields.Keywords
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