Photoluminescence investigation of bulk-grown vanadium-doped gallium arsenide
- 10 October 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (28) , L915-L920
- https://doi.org/10.1088/0022-3719/18/28/004
Abstract
The photoluminescence at 10K in HB- and LEC-grown GaAs:V has been studied in the spectral range 0.7-1.52 eV. In n-type HB-grown samples the increase of V concentration hinders the formation of donor-Ga-vacancy complexes. In V-compensated semi-insulating LEC samples, in addition to the well known PL band, which is due to VGa3+(3d2) centre, a broad band at 0.8 eV has been found to be V-related. It probably indicates the presence of a second acceptor-type centre, which should be responsible for the compensation in V-doped gallium arsenide.Keywords
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