Fabrication and characterization of lateral InP/InGaAsP heterojunctions and bipolar transistors
- 5 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (23) , 2318-2320
- https://doi.org/10.1063/1.101114
Abstract
We have investigated the fabrication of lateral InP/InGaAsP heterojunctions using both wet chemical and in situ melt‐back etching and regrowth to form the device junctions. The current/voltage characteristics of the melt‐back‐etched and regrown heterojunctions exhibit ideality factors as low as 1.25. In addition, we have fabricated lateral heterojunction bipolar transistors with 2 μm base widths which exhibit a current gain of 6. These results indicate that regrown heterojunctions have adequate injection efficiency to form the active region of devices.Keywords
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