Structural, Optical and Electrical Properties of μc-Si:H Very Thin Films Deposited by the VHF-GD Technique
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
In this paper we present new results for very thin μc-Si:H films (< 350 Å) deposited at low temperature (170 C) by the Very High Frequency - Glow Discharge technique (VHF-GD) at 70 MHz. First, the effect of boron doping on the growth and electrical properties of μc-Si:H very thin films is investigated, leading to an optimised value of about 0.6 % (B2H6/SiH4). Structural properties of an optimised thickness series ranging from 100 to 350 Å are studied using TEM, Raman, grazing angle X-ray diffraction/reflection and spectroscopie ellipsometry. Further, a columnar structure growth model for these very thin -type μc-Si:H films will be proposed.Keywords
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