Electrical properties of laser annealed AuGe/GaAs ohmic contacts
- 1 November 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (11) , 6997-7001
- https://doi.org/10.1063/1.328666
Abstract
Contact resistivity measurements of laser annealed AuGe/GaAs ohmic contacts as a function of depth (contact resistivity profiling) has shown a monotonically increasing contact resistivity profile for energy densities lower than 2.12 J/cm2. For energy densities higher than 2.12 J/cm2 a minimum in the profiles was observed at a depth of 1200 Å. This suggests that minima previously observed in the variation of contact resistivity as a function of laser energy density are due to a surface phenomenon. These profiles further show that ohmic contacts can be made to GaAs by deposition of metal films on GaAs surfaces from which laser annealed AuGe films have been removed. Contact resistivities as low as 1×10−6 Ω cm2 were obtained even when metal was deposited on GaAs etched to a depth of 1000 Å. Secondary ion mass spectroscopy profiles are included which allow the redistribution of Ge into GaAs to be compared with these contact resistivity profiles.This publication has 5 references indexed in Scilit:
- Laser annealing of ohmic contacts on GaAsApplied Physics Letters, 1981
- Ohmic contacts on n-GaAs produced by laser alloying of Ge filmsElectronics Letters, 1980
- Metal-N-type semiconductor ohmic contact with a shallow N+ surface layerSolid-State Electronics, 1978
- Selective etching of Au-Ge alloy films on GaAsThin Solid Films, 1977
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971