Atomic layer epitaxy of InP
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (3) , 265-268
- https://doi.org/10.1007/bf02660452
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Steric hindrance effects in atomic layer epitaxy of InAsApplied Physics Letters, 1989
- Self-Limited Growth in InP Epitaxy by Alternate Gas SupplyJapanese Journal of Applied Physics, 1988
- Self-limiting mechanism in the atomic layer epitaxy of GaAsApplied Physics Letters, 1986
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2Journal of the Electrochemical Society, 1985