Zn-diffused laser junctions in InxGa1−xAs and InAsxP1−x grown from In solution at constant temperature
- 1 August 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (8) , 3533-3537
- https://doi.org/10.1063/1.1661750
Abstract
The growth of In x Ga1−x As and InAs x P1−x at constant temperature from In solution by a modified Bridgman method is discussed. Laser diodes are fabricated by Zndiffusion into the n‐type substrates, and threshold currents as low as 2000 A/cm2 (77 °K) are found for In x Ga1−x As (x = 0.16) diodes.Pulsed laser operation has been achieved up to 230 °K. The variation in mode spacing across the spectrum is discussed and comparison is made with photoexcited lasers, on the same substrate material, which do not exhibit a large change in mode spacing and n ‐ λdn/dλ. Observations of a large tunneling zero‐bias anomaly in the conductance‐voltage characteristic show that there are defects in the junction barrier region.This publication has 17 references indexed in Scilit:
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