Wafer bonding technology for optoelectronic integrated devices

This publication has 27 references indexed in Scilit:

• Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding
  IEEE Photonics Technology Letters, 1996
• Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
  Applied Physics Letters, 1993
• Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
  Japanese Journal of Applied Physics, 1993
• Co-integration of optoelectronics and submicrometer CMOS
  IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1993
• 1.3 μm InGaAsP ridge waveguide laser on GaAs and silicon substrates by thin-film transfer
  Electronics Letters, 1991
• Room-temperature operation of an InGaAsP double-heterostructure laser emitting at 1.55 μm on a Si substrate
  Applied Physics Letters, 1990
• Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
  Applied Physics Letters, 1990
• Design of 4-kbit*4-layer optically coupled three-dimensional common memory for parallel processor system
  IEEE Journal of Solid-State Circuits, 1990
• First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate
  Applied Physics Letters, 1988
• Optical interconnections for VLSI systems
  Proceedings of the IEEE, 1984