Co-integration of optoelectronics and submicrometer CMOS
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Hybrids, and Manufacturing Technology
- Vol. 16 (7) , 674-685
- https://doi.org/10.1109/33.257867
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Integration of GaAs LEDs with silicon circuits by epitaxial lift-offPublished by SPIE-Intl Soc Optical Eng ,1993
- Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterizationIEEE Journal of Quantum Electronics, 1991
- The effects of low-angle off-axis substrate orientation on MOSFET performance and reliabilityIEEE Transactions on Electron Devices, 1991
- Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/ junction formation in submicrometer CMOS devicesIEEE Transactions on Electron Devices, 1991
- Comparison of optical and electrical data interconnections at the board and backplane levelsPublished by SPIE-Intl Soc Optical Eng ,1990
- Monolithic integration of GaAs/AlGaAs LED and Si driver circuitIEEE Electron Device Letters, 1988
- A study of the leakage mechanisms of silicided n+/p junctionsJournal of Applied Physics, 1988
- Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET'sIEEE Electron Device Letters, 1986
- Monolithic integration of Si MOSFET's and GaAs MESFET'sIEEE Electron Device Letters, 1986
- Carrier-density fluctuations and the IGFET mobility near thresholdJournal of Applied Physics, 1975