Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser
- 11 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (2) , 135-137
- https://doi.org/10.1063/1.112972
Abstract
The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.Keywords
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