Nitrogen doping and carrier compensation in p-ZnSe
- 2 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 159 (1-4) , 214-220
- https://doi.org/10.1016/0022-0248(95)00799-7
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Epitaxial growth of p-type ZnMgSSeApplied Physics Letters, 1994
- Extremely low resistivity, high electron concentration ZnSe grown by planar-doping methodApplied Physics Letters, 1992
- Native defects and self-compensation in ZnSePhysical Review B, 1992
- Heavily doped p-ZnSe:N grown by molecular beam epitaxyApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- Molecular beam epitaxial growth of low-resistivity ZnSe filmsApplied Physics Letters, 1979
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964
- PURIFICATION OF II–VI COMPOUNDS BY SOLVENT EXTRACTIONApplied Physics Letters, 1962