In0.35Ga0.65P light-emitting diodes grown by gas-source molecular beam epitaxy
- 6 July 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (1) , 58-60
- https://doi.org/10.1063/1.107668
Abstract
Light‐emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p‐i‐n junctions in In0.35Ga0.65P. This alloy is close to that with the largest direct band gap in the InyGa1−yP system and has lattice mismatch from the GaAs substrate of 1%. Specularly smooth surface morphology is obtained in this gas‐source MBE material through the use of a unique strained‐layer‐superlattice buffer. Diodes exhibit good rectification and good reverse breakdown characteristics.Keywords
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