A model of ion synthesis of buried dielectric layers in silicon
- 1 June 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 58 (2) , 179-186
- https://doi.org/10.1016/0168-583x(91)95584-z
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- 18O isotope studies on the redistribution of oxygen in noncontinuous buried layers formed by high-dose oxygen ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Modeling of Nitrogen High Dose Implantation into Silicon in the Energy Range of 150 to 330 keVPhysica Status Solidi (a), 1989
- Ion beam synthesis of thin buried layers of SiO2 in siliconVacuum, 1986
- Model investigations of the oxidation of silicon by high dose implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15NNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Transmission electron microscopy and Auger electron spectroscopy of silicon-on-insulator structures prepared by high-dose implantation of nitrogenJournal of Applied Physics, 1985
- A model for the evolution of implanted oxygen profiles in siliconThin Solid Films, 1984
- Formation of silicon nitride compound layers by high-dose nitrogen implantationJournal of Applied Physics, 1980
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973