Model investigations of the oxidation of silicon by high dose implantation

This publication has 12 references indexed in Scilit:

• A model for the oxidation of silicon by high dose oxygen implantation
  Thin Solid Films, 1985
• Silicon on insulator structures formed by the implantation of high doses of reactive ions
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• An AES Investigation into the Phase Distribution of Ion‐Implanted Oxygen in Silicon N‐Channel Devices
  Journal of the Electrochemical Society, 1984
• A model for the evolution of implanted oxygen profiles in silicon
  Thin Solid Films, 1984
• Synthesis of silicon dioxide by ion implantation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
• Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
  Vacuum, 1984
• Formation of Oxide Layers by High Dose Implantation into Silicon
  MRS Proceedings, 1983
• Formation of Buried Oxide in Silicon by High-Dose Oxygen Implantation, and Application of this Technology to CMOS Devices
  MRS Proceedings, 1983
• Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen
  MRS Proceedings, 1983
• C.M.O.S. devices fabricated on buried SiO ² layers formed by oxygen implantation into silicon
  Electronics Letters, 1978