Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates
- 19 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (20) , 2714-2716
- https://doi.org/10.1063/1.119001
Abstract
High quality thin-film transistors (TFTs) with hydrogenated amorphous silicon, a-Si:H, deposited by hot-wire chemical vapor deposition as the active layer at growth rates above 20 Å/s, have been prepared using a standard, low-temperature process on glass substrates. These TFTs show a switching ratio above 3×106, a threshold voltage of 6 V, a subthreshold slope of 1.7 V/decade, and a field effect mobility of 0.1 cm2 V−1 s1.Keywords
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