Conformal implantation for trench doping with plasma immersion ion implantation
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 898-901
- https://doi.org/10.1016/0168-583x(91)96303-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Indirect trench sidewall doping by implantation of reflected ionsApplied Physics Letters, 1989
- New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasmaApplied Physics Letters, 1988
- Plasma source ion-implantation technique for surface modification of materialsJournal of Applied Physics, 1987
- Ion implantation into three-dimensional structuresNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Depth Profiles of Boron Atoms with Large Tilt‐Angle ImplantationsJournal of the Electrochemical Society, 1986